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In Stock
BOOK GAN FET
EPC
Manufacturer : EPC
Series : eGaN®
Part Status : Active
Type : Book
Title : GaN Transistors for Efficient Power Conversion
Author(s) : Alex Lidow, Johan Strydom, Michael de Rooij, Yanping Ma
Publisher : Power Conversion Publications
ISBN : -
Series : eGaN®
Part Status : Active
Type : Book
Title : GaN Transistors for Efficient Power Conversion
Author(s) : Alex Lidow, Johan Strydom, Michael de Rooij, Yanping Ma
Publisher : Power Conversion Publications
ISBN : -
0
3 in stock
EPC2001
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (11-Solder Bar)
Package / Case : Die
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (11-Solder Bar)
Package / Case : Die
0
45000 in stock
EPC2001C
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 36A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (11-Solder Bar)
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 36A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (11-Solder Bar)
Package / Case : Die
0
140632 in stock
EPC2007
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Obsolete
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs : 2.8nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 205pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (5-Solder Bar)
Package / Case : Die
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Obsolete
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs : 2.8nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 205pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (5-Solder Bar)
Package / Case : Die
0
100 in stock
EPC2007C
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 220pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (5-Solder Bar)
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 220pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (5-Solder Bar)
Package / Case : Die
0
32305 in stock
EPC2010
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
100 in stock
EPC2010C
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 12A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 5.3nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (7-Solder Bar)
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 12A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 5.3nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (7-Solder Bar)
Package / Case : Die
0
17235 in stock
EPC2012
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 145pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 145pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
100 in stock
EPC2012C
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.3nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (4-Solder Bar)
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.3nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (4-Solder Bar)
Package / Case : Die
0
8495 in stock
EPC2014
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 5A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.8nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 325pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (5-Solder Bar)
Package / Case : Die
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 5A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.8nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 325pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (5-Solder Bar)
Package / Case : Die
0
9000 in stock
EPC2014C
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 10A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (5-Solder Bar)
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 10A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (5-Solder Bar)
Package / Case : Die
0
76915 in stock
EPC2015
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 4 mOhm @ 33A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs : 11.6nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (11-Solder Bar)
Package / Case : Die
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 4 mOhm @ 33A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs : 11.6nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (11-Solder Bar)
Package / Case : Die
0
100 in stock
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