On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.
Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.
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Part Number
Manufacturer
Description
Unit Price
In Stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 230nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2780pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.1W (Ta), 170W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 230nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2780pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.1W (Ta), 170W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 26.5 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1770pF @ 25V
FET Feature : -
Power Dissipation (Max) : 92W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
0
862 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 26.5 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1770pF @ 25V
FET Feature : -
Power Dissipation (Max) : 92W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 290 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 860pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.8W (Ta), 110W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 150 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2210pF @ 25V
FET Feature : -
Power Dissipation (Max) : 250W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Last Time Buy
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 150 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2210pF @ 25V
FET Feature : -
Power Dissipation (Max) : 250W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 255pF @ 25V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 255pF @ 25V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
7048 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.7V, 4.5V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id : 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id : 3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 515pF @ 25V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id : 3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 515pF @ 25V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
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