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Microchip Technology
- Microchip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.
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Part Number
Manufacturer
Description
Unit Price
In Stock
VN0808L-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 300mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 300mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
796 in stock
VN10KN3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 310mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 310mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
1593 in stock
VN10KN3-G-P002
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 310mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 310mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
1917 in stock
VN1206L-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 120V
Current - Continuous Drain (Id) @ 25°C : 230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 125pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 120V
Current - Continuous Drain (Id) @ 25°C : 230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 125pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
1042 in stock
VN2106N3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
1754 in stock
VN2110K1-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 360mW (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 360mW (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
0
1407 in stock
VN2210N2
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 350 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 360mW (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 350 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 360mW (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
307 in stock
VN2210N3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 350 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 740mW (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 350 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 740mW (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
903 in stock
VN2222LL-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 400mW (Ta), 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 400mW (Ta), 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
12303 in stock
VN2224N3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 240V
Current - Continuous Drain (Id) @ 25°C : 540mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 1.25 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 240V
Current - Continuous Drain (Id) @ 25°C : 540mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 1.25 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
996 in stock
VN2406L-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 240V
Current - Continuous Drain (Id) @ 25°C : 190mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 125pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 240V
Current - Continuous Drain (Id) @ 25°C : 190mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 125pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
290 in stock
VN2410L-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 240V
Current - Continuous Drain (Id) @ 25°C : 190mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 10 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 125pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 240V
Current - Continuous Drain (Id) @ 25°C : 190mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 10 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 125pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
289 in stock
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