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Part Number
Manufacturer
Description
Unit Price
In Stock
2SC5084YTE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1.1dB @ 1GHz
Gain : 11dB
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SC-59
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1.1dB @ 1GHz
Gain : 11dB
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SC-59
0
1236 in stock
.jpg "Show details for 2SC5085-O(TE85L,F)")
2SC5085-O(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : -
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : -
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
100 in stock
.jpg "Show details for 2SC5085-Y(TE85L,F)")
2SC5085-Y(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1.1dB @ 1GHz
Gain : 11dB ~ 16.5dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1.1dB @ 1GHz
Gain : 11dB ~ 16.5dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
100 in stock
2SC5086-O,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : -
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : -
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
7 in stock
2SC5086-Y,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : -
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : -
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
100 in stock
.jpg "Show details for 2SC5087-O(TE85L,F)")
2SC5087-O(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB ~ 1.1dB @ 500MHz ~ 1GHz
Gain : -
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-61AA
Supplier Device Package : SMQ
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB ~ 1.1dB @ 500MHz ~ 1GHz
Gain : -
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-61AA
Supplier Device Package : SMQ
0
2425 in stock
.jpg "Show details for 2SC5087R(TE85L,F)")
2SC5087R(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 8GHz
Noise Figure (dB Typ @ f) : 1.1dB ~ 2dB @ 1GHz
Gain : -
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-61AA
Supplier Device Package : SMQ
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 8GHz
Noise Figure (dB Typ @ f) : 1.1dB ~ 2dB @ 1GHz
Gain : -
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-61AA
Supplier Device Package : SMQ
0
2751 in stock
2SC5087YTE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1.1dB @ 1GHz
Gain : 13dB
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-61AA
Supplier Device Package : SMQ
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1.1dB @ 1GHz
Gain : 13dB
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-61AA
Supplier Device Package : SMQ
0
100 in stock
2SC5088-O(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : 18dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-82A, SOT-343
Supplier Device Package : USQ
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : 18dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-82A, SOT-343
Supplier Device Package : USQ
0
100 in stock
.jpg "Show details for 2SC5095-O(TE85L,F)")
2SC5095-O(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 10GHz
Noise Figure (dB Typ @ f) : 1.8dB @ 2GHz
Gain : 13dB ~ 7dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 7mA, 6V
Current - Collector (Ic) (Max) : 15mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : SC-70
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 10GHz
Noise Figure (dB Typ @ f) : 1.8dB @ 2GHz
Gain : 13dB ~ 7dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 7mA, 6V
Current - Collector (Ic) (Max) : 15mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : SC-70
0
100 in stock
.jpg "Show details for 2SC5095-R(TE85L,F)")
2SC5095-R(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 10GHz
Noise Figure (dB Typ @ f) : 1.8dB @ 2GHz
Gain : 13dB ~ 7.5dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 7mA, 6V
Current - Collector (Ic) (Max) : 15mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : SC-70
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 10GHz
Noise Figure (dB Typ @ f) : 1.8dB @ 2GHz
Gain : 13dB ~ 7.5dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 7mA, 6V
Current - Collector (Ic) (Max) : 15mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : SC-70
0
100 in stock
2SC5096-R,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 10GHz
Noise Figure (dB Typ @ f) : 1.4dB @ 1GHz
Gain : 1.4dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 7mA, 6V
Current - Collector (Ic) (Max) : 15mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 10GHz
Noise Figure (dB Typ @ f) : 1.4dB @ 1GHz
Gain : 1.4dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 7mA, 6V
Current - Collector (Ic) (Max) : 15mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
100 in stock
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