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Part Number
Manufacturer
Description
Unit Price
In Stock

HFA3128RZ96 HFA3128RZ96

Intersil (Renesas Electronics America)
Manufacturer : Renesas Electronics America Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 5 PNP
Voltage - Collector Emitter Breakdown (Max) : 15V
Frequency - Transition : 5.5GHz
Noise Figure (dB Typ @ f) : 3.5dB @ 1GHz
Gain : -
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10mA, 2V
Current - Collector (Ic) (Max) : 65mA
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 16-VFQFN Exposed Pad
Supplier Device Package : 16-QFN (3x3)
0
100 in stock

HFA3134IH96 HFA3134IH96

Intersil (Renesas Electronics America)
Manufacturer : Renesas Electronics America Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) : 9V
Frequency - Transition : 8.5GHz
Noise Figure (dB Typ @ f) : 2.4dB @ 1GHz
Gain : -
Power - Max : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 48 @ 10mA, 2V
Current - Collector (Ic) (Max) : 26mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-23-6
Supplier Device Package : SOT-23-6
0
100 in stock

HFA3134IHZ96 HFA3134IHZ96

Intersil (Renesas Electronics America)
Manufacturer : Renesas Electronics America Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) : 9V
Frequency - Transition : 8.5GHz
Noise Figure (dB Typ @ f) : 2.4dB @ 1GHz
Gain : -
Power - Max : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 48 @ 10mA, 2V
Current - Collector (Ic) (Max) : 26mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-23-6
Supplier Device Package : SOT-23-6
0
4476 in stock

HFA3135IH96 HFA3135IH96

Intersil (Renesas Electronics America)
Manufacturer : Renesas Electronics America Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max) : 9V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 5.2dB @ 900MHz
Gain : -
Power - Max : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 15 @ 10mA, 2V
Current - Collector (Ic) (Max) : 26mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-23-6
Supplier Device Package : SOT-23-6
0
100 in stock

HN3C10FUTE85LF HN3C10FUTE85LF

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1.1dB @ 1GHz
Gain : 11.5dB
Power - Max : 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : -
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock

JAN2N2857 JAN2N2857

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : Military, MIL-PRF-19500/343
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 15V
Frequency - Transition : 500MHz
Noise Figure (dB Typ @ f) : 4.5dB @ 450MHz
Gain : 12.5dB ~ 21dB @ 450MHz
Power - Max : 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 3mA, 1V
Current - Collector (Ic) (Max) : 40mA
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-72-3 Metal Can
Supplier Device Package : TO-72
0
100 in stock

JAN2N2857UB JAN2N2857UB

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 15V
Frequency - Transition : -
Noise Figure (dB Typ @ f) : 4.5dB @ 450MHz
Gain : 21dB
Power - Max : 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 3mA, 1V
Current - Collector (Ic) (Max) : 40mA
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Surface Mount
Package / Case : 3-SMD, No Lead
Supplier Device Package : UB
0
100 in stock

JAN2N4957 JAN2N4957

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Discontinued at
Transistor Type : PNP
Voltage - Collector Emitter Breakdown (Max) : 30V
Frequency - Transition : -
Noise Figure (dB Typ @ f) : 3.5dB @ 450MHz
Gain : 25dB
Power - Max : 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 10V
Current - Collector (Ic) (Max) : 30mA
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-72-3 Metal Can
Supplier Device Package : TO-72
0
100 in stock

JANS2N2857UB-LC JANS2N2857UB-LC

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tray
Series : Military, MIL-PRF-19500/343
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 15V
Frequency - Transition : -
Noise Figure (dB Typ @ f) : 4.5dB @ 450MHz
Gain : 21dB
Power - Max : 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 3mA, 1V
Current - Collector (Ic) (Max) : 40mA
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Surface Mount
Package / Case : 3-SMD, No Lead
Supplier Device Package : UB
0
100 in stock

JANTX2N2857 JANTX2N2857

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : Military, MIL-PRF-19500/343
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 15V
Frequency - Transition : 500MHz
Noise Figure (dB Typ @ f) : 4.5dB @ 450MHz
Gain : 12.5dB ~ 21dB @ 450MHz
Power - Max : 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 3mA, 1V
Current - Collector (Ic) (Max) : 40mA
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-72-3 Metal Can
Supplier Device Package : TO-72
0
100 in stock

JANTX2N2857UB JANTX2N2857UB

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 15V
Frequency - Transition : -
Noise Figure (dB Typ @ f) : 4.5dB @ 450MHz
Gain : 21dB
Power - Max : 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 3mA, 1V
Current - Collector (Ic) (Max) : 40mA
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Surface Mount
Package / Case : 3-SMD, No Lead
Supplier Device Package : UB
0
100 in stock

JANTXV2N2857 JANTXV2N2857

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : Military, MIL-PRF-19500/343
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 15V
Frequency - Transition : 500MHz
Noise Figure (dB Typ @ f) : 4.5dB @ 450MHz
Gain : 12.5dB ~ 21dB @ 450MHz
Power - Max : 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 3mA, 1V
Current - Collector (Ic) (Max) : 40mA
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-72-3 Metal Can
Supplier Device Package : TO-72
0
100 in stock