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Part Number
Manufacturer
Description
Unit Price
In Stock
2N7635-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 415 mOhm @ 4A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 35V
FET Feature : -
Power Dissipation (Max) : 47W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 415 mOhm @ 4A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 35V
FET Feature : -
Power Dissipation (Max) : 47W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
0
100 in stock
2N7636-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 415 mOhm @ 4A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 35V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 415 mOhm @ 4A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 35V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
0
100 in stock
2N7637-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 170 mOhm @ 7A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 35V
FET Feature : -
Power Dissipation (Max) : 80W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 170 mOhm @ 7A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 35V
FET Feature : -
Power Dissipation (Max) : 80W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
0
100 in stock
2N7638-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc) (158°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 170 mOhm @ 8A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 35V
FET Feature : -
Power Dissipation (Max) : 200W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc) (158°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 170 mOhm @ 8A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 35V
FET Feature : -
Power Dissipation (Max) : 200W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
0
100 in stock
2N7639-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 105 mOhm @ 15A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1534pF @ 35V
FET Feature : -
Power Dissipation (Max) : 172W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 105 mOhm @ 15A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1534pF @ 35V
FET Feature : -
Power Dissipation (Max) : 172W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
0
100 in stock
2N7640-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 105 mOhm @ 16A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1534pF @ 35V
FET Feature : -
Power Dissipation (Max) : 330W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 105 mOhm @ 16A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1534pF @ 35V
FET Feature : -
Power Dissipation (Max) : 330W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
0
100 in stock
2SJ053600L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 75 Ohm @ 10mA, 5V
Vgs(th) (Max) @ Id : 2V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-G1
Package / Case : SC-70, SOT-323
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 75 Ohm @ 10mA, 5V
Vgs(th) (Max) @ Id : 2V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-G1
Package / Case : SC-70, SOT-323
0
100 in stock
2SJ0536G0L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 75 Ohm @ 10mA, 5V
Vgs(th) (Max) @ Id : 2V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-F2
Package / Case : SC-85
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 75 Ohm @ 10mA, 5V
Vgs(th) (Max) @ Id : 2V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-F2
Package / Case : SC-85
0
100 in stock
2SJ058200L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 400pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1W (Ta), 10W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : U-G2
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 400pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1W (Ta), 10W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : U-G2
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
2SJ067400L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 18 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSSMini3-F1
Package / Case : SOT-723
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 18 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSSMini3-F1
Package / Case : SOT-723
0
100 in stock
2SJ0674G0L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 18 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSSMini3-F2
Package / Case : SOT-723
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 18 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSSMini3-F2
Package / Case : SOT-723
0
100 in stock
2SJ162-E
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 160V
Current - Continuous Drain (Id) @ 25°C : 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±15V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 160V
Current - Continuous Drain (Id) @ 25°C : 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±15V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
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