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Part Number
Manufacturer
Description
Unit Price
In Stock
UPA2792GR(0)-E1-AZ
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
UPA2793GR(0)-E2-AY
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
UPA2793GR(01)-E2-AY
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
UPA2794GR(0)-E1-AZ
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
UPA2812T1L-E1-AT
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3740pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta), 52W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HVSON (3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3740pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta), 52W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HVSON (3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
UPA2812T1L-E2-AT
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3740pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HWSON (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3740pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HWSON (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
UPA2813T1L-E1-AT
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 3130pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta), 52W (Tc)
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : 8-HVSON (3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 3130pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta), 52W (Tc)
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : 8-HVSON (3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
UPA2813T1L-E2-AT
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3130pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HWSON (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3130pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HWSON (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
UPA2821T1L-E1-AT
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tape & Reel (TR)
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 51nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2490pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HWSON (3.3x3.3)
Package / Case : 8-PowerWDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 51nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2490pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HWSON (3.3x3.3)
Package / Case : 8-PowerWDFN
0
100 in stock
US5U29TR
Kionix
Manufacturer : Rohm Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 2.1nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TUMT5
Package / Case : 6-SMD (5 Leads), Flat Lead
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 2.1nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TUMT5
Package / Case : 6-SMD (5 Leads), Flat Lead
0
100 in stock
US5U35TR
Kionix
Manufacturer : Rohm Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 45V
Current - Continuous Drain (Id) @ 25°C : 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 800 mOhm @ 700mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.7nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 120pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TUMT5
Package / Case : 6-SMD (5 Leads), Flat Lead
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 45V
Current - Continuous Drain (Id) @ 25°C : 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 800 mOhm @ 700mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.7nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 120pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TUMT5
Package / Case : 6-SMD (5 Leads), Flat Lead
0
2569 in stock
US5U38TR
Kionix
Manufacturer : Rohm Semiconductor
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Not For New Designs
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 2.1nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TUMT5
Package / Case : 6-SMD (5 Leads), Flat Lead
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Not For New Designs
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 2.1nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TUMT5
Package / Case : 6-SMD (5 Leads), Flat Lead
0
6000 in stock
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