Welcome to Weijie Semiconductor
Image
Part Number
Manufacturer
Description
Unit Price
In Stock

ZVN1409ASTOA ZVN1409ASTOA

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 10mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 250 Ohm @ 5mA, 10V
Vgs(th) (Max) @ Id : 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6.5pF @ 25V
FET Feature : -
Power Dissipation (Max) : 625mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : E-Line (TO-92 compatible)
Package / Case : E-Line-3
0
100 in stock

ZVN1409ASTOB ZVN1409ASTOB

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 10mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 250 Ohm @ 5mA, 10V
Vgs(th) (Max) @ Id : 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6.5pF @ 25V
FET Feature : -
Power Dissipation (Max) : 625mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : E-Line (TO-92 compatible)
Package / Case : E-Line-3
0
100 in stock

ZVN1409ASTZ ZVN1409ASTZ

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 10mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 250 Ohm @ 5mA, 10V
Vgs(th) (Max) @ Id : 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6.5pF @ 25V
FET Feature : -
Power Dissipation (Max) : 625mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : E-Line (TO-92 compatible)
Package / Case : E-Line-3
0
100 in stock

ZVN2106A ZVN2106A

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 18V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
7021 in stock

ZVN2106ASTOA ZVN2106ASTOA

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 18V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : E-Line (TO-92 compatible)
Package / Case : E-Line-3
0
100 in stock

ZVN2106ASTOB ZVN2106ASTOB

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 18V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : E-Line (TO-92 compatible)
Package / Case : E-Line-3
0
100 in stock

ZVN2106GTA ZVN2106GTA

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 710mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 18V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223
Package / Case : TO-261-4, TO-261AA
0
3690 in stock

ZVN2106GTC ZVN2106GTC

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 710mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 18V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223
Package / Case : TO-261-4, TO-261AA
0
100 in stock

ZVN2110A ZVN2110A

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 25V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
5131 in stock

ZVN2110ASTOA ZVN2110ASTOA

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 25V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : E-Line (TO-92 compatible)
Package / Case : E-Line-3
0
100 in stock

ZVN2110ASTOB ZVN2110ASTOB

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 25V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : E-Line (TO-92 compatible)
Package / Case : E-Line-3
0
100 in stock

ZVN2110ASTZ ZVN2110ASTZ

Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 25V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : E-Line (TO-92 compatible)
Package / Case : E-Line-3
0
1955 in stock