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Part Number
Manufacturer
Description
Unit Price
In Stock
2SK3826
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 26A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2150pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1.75W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 26A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2150pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1.75W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
100 in stock
2SK3827
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 34 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 79nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4200pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1.75W (Ta), 60W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 34 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 79nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4200pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1.75W (Ta), 60W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
100 in stock
.jpg "Show details for 2SK3844(Q)")
2SK3844(Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 196nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 12400pF @ 10V
FET Feature : -
Power Dissipation (Max) : 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220NIS
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 196nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 12400pF @ 10V
FET Feature : -
Power Dissipation (Max) : 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220NIS
Package / Case : TO-220-3 Full Pack
0
100 in stock
.jpg "Show details for 2SK3868(Q,M)")
2SK3868(Q,M)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.7 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 550pF @ 25V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.7 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 550pF @ 25V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
0
100 in stock
2SK3892
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 62 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3177pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220D-A1
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 62 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3177pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220D-A1
Package / Case : TO-220-3 Full Pack
0
100 in stock
2SK3899(0)-ZK-E1-AZ
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
2SK3899(01)-ZK-E1-AY
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
2SK3901(0)-ZK-E1-AY
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
2SK3902(0)-ZK-E1-AY
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
.jpg "Show details for 2SK3906(Q)")
2SK3906(Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 330 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 4250pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 330 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 4250pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
2SK3943-ZP-E1-AY
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5.5V, 10V
Rds On (Max) @ Id, Vgs : 3.5 mOhm @ 41A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 93nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta), 104W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5.5V, 10V
Rds On (Max) @ Id, Vgs : 3.5 mOhm @ 41A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 93nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta), 104W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0
100 in stock
.jpg "Show details for 2SK4016(Q)")
2SK4016(Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 500 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3100pF @ 25V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 500 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3100pF @ 25V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
0
100 in stock
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