Welcome to Weijie Semiconductor
- Discrete Semiconductor Products
- Transistors - FETs, MOSFETs - Single
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
5LP01SS-TL-E
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 70mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4V
Rds On (Max) @ Id, Vgs : 23 Ohm @ 40mA, 4V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 1.4nC @ 10V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 7.4pF @ 10V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-SSFP
Package / Case : SC-81
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 70mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4V
Rds On (Max) @ Id, Vgs : 23 Ohm @ 40mA, 4V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 1.4nC @ 10V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 7.4pF @ 10V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-SSFP
Package / Case : SC-81
0
100 in stock
5LP01SS-TL-H
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 70mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4V
Rds On (Max) @ Id, Vgs : 23 Ohm @ 40mA, 4V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 1.4nC @ 10V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 7.4pF @ 10V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-SSFP
Package / Case : SC-81
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 70mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4V
Rds On (Max) @ Id, Vgs : 23 Ohm @ 40mA, 4V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 1.4nC @ 10V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 7.4pF @ 10V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-SSFP
Package / Case : SC-81
0
100 in stock
5LP01S-TL-E
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 70mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4V
Rds On (Max) @ Id, Vgs : 23 Ohm @ 40mA, 4V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 1.4nC @ 10V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 7.4pF @ 10V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMCP
Package / Case : SC-75, SOT-416
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 70mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4V
Rds On (Max) @ Id, Vgs : 23 Ohm @ 40mA, 4V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 1.4nC @ 10V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 7.4pF @ 10V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMCP
Package / Case : SC-75, SOT-416
0
100 in stock
5X49_BG7002B
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : SOT-23 (TO-236AB)
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : SOT-23 (TO-236AB)
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
62-0063PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.8V, 4.5V
Rds On (Max) @ Id, Vgs : 8 mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id : 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 2550pF @ 6V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.8V, 4.5V
Rds On (Max) @ Id, Vgs : 8 mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id : 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 2550pF @ 6V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)
0
100 in stock
62-0095PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : -
Package / Case : -
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : -
Package / Case : -
0
100 in stock
62-0136PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id : 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3710pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.5W
Operating Temperature : -55°C ~ 150°C (TA)
Mounting Type : Surface Mount
Supplier Device Package : -
Package / Case : -
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id : 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3710pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.5W
Operating Temperature : -55°C ~ 150°C (TA)
Mounting Type : Surface Mount
Supplier Device Package : -
Package / Case : -
0
100 in stock
62-0203PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id : 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 91nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 8676pF @ 10V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id : 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 91nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 8676pF @ 10V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)
0
100 in stock
64-0007
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 67nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1160pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 67nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1160pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
0
100 in stock
64-0055PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 120nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4520pF @ 50V
FET Feature : -
Power Dissipation (Max) : 230W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : -
Package / Case : -
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 120nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4520pF @ 50V
FET Feature : -
Power Dissipation (Max) : 230W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : -
Package / Case : -
0
100 in stock
64-2042
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4340pF @ 25V
FET Feature : -
Power Dissipation (Max) : 220W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-262
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4340pF @ 25V
FET Feature : -
Power Dissipation (Max) : 220W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-262
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
0
100 in stock
64-2092PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 66A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3450pF @ 25V
FET Feature : -
Power Dissipation (Max) : 170W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 66A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3450pF @ 25V
FET Feature : -
Power Dissipation (Max) : 170W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0
100 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
Contact Weijie
- sales@ynnelec.com
- jay@ynnelec.com
- 1132 Nanguang Jiejia Building, No. 3037 Shennan Middle Road, Futian District, Shenzhen
Customer service
Copyright © 2025 Ynnelec. All rights reserved.
webdesign www.wzdzkf.com
Powered by www.wzdzkf.com