AUIRF8736M2TR
AUIRF8736M2TR
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 27A (Ta), 137A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 mOhm @ 85A, 10V
Vgs(th) (Max) @ Id : 3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 204nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6867pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 63W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DIRECTFET™M4
Package / Case : DirectFET™Isometric M4
Availability: 100 in stock
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