VP2206N2
VP2206N2
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 750mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 450pF @ 25V
FET Feature : -
Power Dissipation (Max) : 360mW (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Availability: 532 in stock
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