APT35GP120B2DQ2G
APT35GP120B2DQ2G
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 96A
Current - Collector Pulsed (Icm) : 140A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 35A
Power - Max : 543W
Switching Energy : 750µJ (on), 680µJ (off)
Input Type : Standard
Gate Charge : 150nC
Td (on/off) @ 25°C : 16ns/95ns
Test Condition : 600V, 35A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Availability: 16 in stock
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