APT65GP60B2G
APT65GP60B2G
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 250A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 65A
Power - Max : 833W
Switching Energy : 605µJ (on), 896µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 30ns/91ns
Test Condition : 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Availability: 119 in stock
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