BFU660F,115
BFU660F,115
Manufacturer : NXP USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 5.5V
Frequency - Transition : 21GHz
Noise Figure (dB Typ @ f) : 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain : 12dB ~ 21dB
Power - Max : 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 90 @ 10mA, 2V
Current - Collector (Ic) (Max) : 60mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-343F
Supplier Device Package : 4-DFP
Availability: 8940 in stock
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