J112,126
J112,126
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Voltage - Breakdown (V(BR)GSS) : 40V
Drain to Source Voltage (Vdss) : 40V
Current - Drain (Idss) @ Vds (Vgs=0) : 5mA @ 15V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds : 6pF @ 10V (VGS)
Resistance - RDS(On) : 50 Ohms
Power - Max : 400mW
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Availability: 100 in stock
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