2SJ665-DL-1EX
2SJ665-DL-1EX
Manufacturer : ON Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 77 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4200pF @ 20V
FET Feature : -
Power Dissipation (Max) : 65W (Tc)
Operating Temperature : 150°C (TA)
Mounting Type : Surface Mount
Supplier Device Package : TO-263-2
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Availability: 100 in stock
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