EMD4DXV6T1G
EMD4DXV6T1G
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms, 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Package / Case : SOT-563, SOT-666
Supplier Device Package : SOT-563
Availability: 3958 in stock