FGD3N60LSDTM-T
FGD3N60LSDTM-T
Manufacturer : ON Semiconductor
Packaging : -
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 6A
Current - Collector Pulsed (Icm) : 25A
Vce(on) (Max) @ Vge, Ic : 1.5V @ 10V, 3A
Power - Max : 40W
Switching Energy : 250µJ (on), 1mJ (off)
Input Type : Standard
Gate Charge : 12.5nC
Td (on/off) @ 25°C : 40ns/600ns
Test Condition : 480V, 3A, 470 Ohm, 10V
Reverse Recovery Time (trr) : 234ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-252, (D-Pak)
Availability: 100 in stock