HGT1S12N60A4DS
HGT1S12N60A4DS
Manufacturer : ON Semiconductor
Packaging : Tube
Series : -
Part Status : Not For New Designs
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 54A
Current - Collector Pulsed (Icm) : 96A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 12A
Power - Max : 167W
Switching Energy : 55µJ (on), 50µJ (off)
Input Type : Standard
Gate Charge : 78nC
Td (on/off) @ 25°C : 17ns/96ns
Test Condition : 390V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr) : 30ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Availability: 8800 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
