HGT1S7N60A4DS
HGT1S7N60A4DS
Manufacturer : ON Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 34A
Current - Collector Pulsed (Icm) : 56A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 7A
Power - Max : 125W
Switching Energy : 55µJ (on), 60µJ (off)
Input Type : Standard
Gate Charge : 37nC
Td (on/off) @ 25°C : 11ns/100ns
Test Condition : 390V, 7A, 25 Ohm, 15V
Reverse Recovery Time (trr) : 34ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Availability: 100 in stock