Welcome to Weijie Semiconductor

HGTP12N60C3D

HGTP12N60C3D
Manufacturer : ON Semiconductor
Packaging : Tube
Series : -
Part Status : Not For New Designs
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 24A
Current - Collector Pulsed (Icm) : 96A
Vce(on) (Max) @ Vge, Ic : 2.2V @ 15V, 15A
Power - Max : 104W
Switching Energy : 380µJ (on), 900µJ (off)
Input Type : Standard
Gate Charge : 48nC
Td (on/off) @ 25°C : -
Test Condition : -
Reverse Recovery Time (trr) : 40ns
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220AB
Availability: 100 in stock
RFQ/Quote