HGTP5N120BND
HGTP5N120BND
Manufacturer : ON Semiconductor
Packaging : Tube
Series : -
Part Status : Not For New Designs
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 21A
Current - Collector Pulsed (Icm) : 40A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 5A
Power - Max : 167W
Switching Energy : 450µJ (on), 390µJ (off)
Input Type : Standard
Gate Charge : 53nC
Td (on/off) @ 25°C : 22ns/160ns
Test Condition : 960V, 5A, 25 Ohm, 15V
Reverse Recovery Time (trr) : 65ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220AB
Availability: 100 in stock
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