TT8U1TR
TT8U1TR
Manufacturer : Rohm Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 105 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 6.7nC @ 4.5V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 850pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 1.25W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSST
Package / Case : 8-SMD, Flat Lead
Availability: 8357 in stock