TSM650N15CR RLG
TSM650N15CR RLG
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1829pF @ 75V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-PDFN (5x6)
Package / Case : 8-PowerTDFN
Availability: 4290 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
