TSM650P02CX RFG
TSM650P02CX RFG
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.1nC @ 4.5V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 515pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.56W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23
Package / Case : TO-236-3, SC-59, SOT-23-3
Availability: 5712 in stock
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