TSM80N1R2CL C0G
TSM80N1R2CL C0G
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.2 Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 19.4nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 685pF @ 100V
FET Feature : -
Power Dissipation (Max) : 110W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-262S (I2PAK)
Package / Case : TO-262-3 Short Leads, I²Pak
Availability: 1000 in stock
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