TSM900N10CH X0G
TSM900N10CH X0G
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 90 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1480pF @ 50V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-251 (IPAK)
Package / Case : TO-251-3 Stub Leads, IPak
Availability: 3696 in stock
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