TSM9N90ECI C0G
TSM9N90ECI C0G
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2470pF @ 25V
FET Feature : -
Power Dissipation (Max) : 89W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220
Package / Case : TO-220-3 Full Pack, Isolated Tab
Availability: 980 in stock
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