GT50J121(Q)
GT50J121(Q)
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 50A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 2.45V @ 15V, 50A
Power - Max : 240W
Switching Energy : 1.3mJ (on), 1.34mJ (off)
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 90ns/300ns
Test Condition : 300V, 50A, 13 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3PL
Supplier Device Package : TO-3P(LH)
Availability: 100 in stock
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