GT60N321(Q)
GT60N321(Q)
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 1000V
Current - Collector (Ic) (Max) : 60A
Current - Collector Pulsed (Icm) : 120A
Vce(on) (Max) @ Vge, Ic : 2.8V @ 15V, 60A
Power - Max : 170W
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 330ns/700ns
Test Condition : -
Reverse Recovery Time (trr) : 2.5µs
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3PL
Supplier Device Package : TO-3P(LH)
Availability: 100 in stock
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