MT3S111P(TE12L,F)
MT3S111P(TE12L,F)
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 6V
Frequency - Transition : 8GHz
Noise Figure (dB Typ @ f) : 1.25dB @ 1GHz
Gain : 10.5dB
Power - Max : 1W
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
Current - Collector (Ic) (Max) : 100mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-243AA
Supplier Device Package : PW-MINI
Availability: 10945 in stock
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