MT3S113(TE85L,F)
MT3S113(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 5.3V
Frequency - Transition : 12.5GHz
Noise Figure (dB Typ @ f) : 1.45dB @ 1GHz
Gain : 11.8dB
Power - Max : 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
Current - Collector (Ic) (Max) : 100mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Availability: 6000 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
