MT3S113TU,LF
MT3S113TU,LF
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 5.3V
Frequency - Transition : 11.2GHz
Noise Figure (dB Typ @ f) : 1.45dB @ 1GHz
Gain : 12.5dB
Power - Max : 900mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
Current - Collector (Ic) (Max) : 100mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 3-SMD, Flat Leads
Supplier Device Package : UFM
Availability: 6000 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
