MT3S20P(TE12L,F)
MT3S20P(TE12L,F)
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1.45dB @ 1GHz
Gain : 16.5dB
Power - Max : 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-243AA
Supplier Device Package : PW-MINI
Availability: 100 in stock
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