Taiwan Semiconductor
- Recognized for more than 37 years for its core competence in discrete power rectifiers, Taiwan Semiconductor has expanded its product portfolio to include trench schottkys, analog ICs, LED driver ICs, power transistors and MOSFETs, and now provides a complete solution from one source. Taiwan Semiconductor products are used in a vast array of applications in the electronics industry, including automotive, computer, consumer, industrial, telecom and photovoltaic.
Through strategic expansion of innovative manufacturing capabilities, and its focus on pioneering efficient semiconductor solutions, Taiwan Semiconductor is committed to being the right choice for a successful and lasting business relationship and offers these key advantages:
- Broad selection of semiconductor products from one source
- Modern, efficient, and customer-oriented logistics processes
- Maximum flexibility including customer specific requirements
- Maximum level of quality and performance for customer applications
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Part Number
Manufacturer
Description
Unit Price
In Stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.7 Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 453pF @ 50V
FET Feature : -
Power Dissipation (Max) : 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
5678 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 654pF @ 50V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220
Package / Case : TO-220-3 Full Pack, Isolated Tab
0
100 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : -
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.2 Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id : 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17.2nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 582pF @ 50V
FET Feature : -
Power Dissipation (Max) : 41.6W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220
Package / Case : TO-220-3 Full Pack, Isolated Tab
0
100 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : -
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.6 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id : 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 16.8nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 596pF @ 50V
FET Feature : -
Power Dissipation (Max) : 41.6W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220
Package / Case : TO-220-3 Full Pack, Isolated Tab
0
100 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 270pF @ 25V
FET Feature : -
Power Dissipation (Max) : 12.5W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.6nC @ 4.5V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 850pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.56W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23
Package / Case : TO-236-3, SC-59, SOT-23-3
0
10528 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.7A (Tc)
Rds On (Max) @ Id, Vgs : 50 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1230pF @ 10V
Power - Max : 620mW
Operating Temperature : -50°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-VDFN Exposed Pad
Supplier Device Package : 6-TDFN (2x2)
0
5765 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.38 Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 586pF @ 50V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220S
Package / Case : TO-220-3 Full Pack
0
977 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.38 Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 586pF @ 50V
FET Feature : -
Power Dissipation (Max) : 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
4959 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : -
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.38 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 586pF @ 50V
FET Feature : -
Power Dissipation (Max) : 89W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
980 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.4nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 423pF @ 25V
FET Feature : -
Power Dissipation (Max) : 52W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-251 (IPAK)
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
0
1849 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 560pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP
Package / Case : 8-SOIC (0.154", 3.90mm Width)
0
5000 in stock
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