Taiwan Semiconductor
- Recognized for more than 37 years for its core competence in discrete power rectifiers, Taiwan Semiconductor has expanded its product portfolio to include trench schottkys, analog ICs, LED driver ICs, power transistors and MOSFETs, and now provides a complete solution from one source. Taiwan Semiconductor products are used in a vast array of applications in the electronics industry, including automotive, computer, consumer, industrial, telecom and photovoltaic.
Through strategic expansion of innovative manufacturing capabilities, and its focus on pioneering efficient semiconductor solutions, Taiwan Semiconductor is committed to being the right choice for a successful and lasting business relationship and offers these key advantages:
- Broad selection of semiconductor products from one source
- Modern, efficient, and customer-oriented logistics processes
- Maximum flexibility including customer specific requirements
- Maximum level of quality and performance for customer applications
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Part Number
Manufacturer
Description
Unit Price
In Stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.7nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 480pF @ 100V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-251 (IPAK)
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
0
100 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.7nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 480pF @ 100V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220
Package / Case : TO-220-3 Full Pack, Isolated Tab
0
970 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.7nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 480pF @ 100V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : -
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 41 mOhm @ 21.7A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 139nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 6120pF @ 100V
FET Feature : -
Power Dissipation (Max) : 446W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247
Package / Case : TO-247-3
0
1497 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : -
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2587pF @ 100V
FET Feature : -
Power Dissipation (Max) : 69W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220S
Package / Case : TO-220-3 Full Pack
0
985 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : -
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2587pF @ 100V
FET Feature : -
Power Dissipation (Max) : 298W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
966 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : -
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2587pF @ 100V
FET Feature : -
Power Dissipation (Max) : 329W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247
Package / Case : TO-247-3
0
1988 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : -
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 150 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1765pF @ 100V
FET Feature : -
Power Dissipation (Max) : 62.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220S
Package / Case : TO-220-3 Full Pack
0
278 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1311pF @ 100V
FET Feature : -
Power Dissipation (Max) : 59.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220S
Package / Case : TO-220-3 Full Pack
0
100 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1273pF @ 100V
FET Feature : -
Power Dissipation (Max) : 33.8W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220
Package / Case : TO-220-3 Full Pack, Isolated Tab
0
100 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1273pF @ 100V
FET Feature : -
Power Dissipation (Max) : 150.6W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (D²Pak)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0
1521 in stock
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1273pF @ 100V
FET Feature : -
Power Dissipation (Max) : 33.8W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
100 in stock
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