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2SK1119(F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.8 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.8 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
0
100 in stock
2SK122800L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 50 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 4.5pF @ 5V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Mini3-G1
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 50 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 4.5pF @ 5V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Mini3-G1
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
2SK1339-E
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 425pF @ 10V
FET Feature : -
Power Dissipation (Max) : 80W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 425pF @ 10V
FET Feature : -
Power Dissipation (Max) : 80W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
2SK1340-E
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
2SK1341-E
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 980pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 980pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
2SK1342-E
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1730pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1730pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
2SK137400L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 50 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 4.5pF @ 5V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-G1
Package / Case : SC-70, SOT-323
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 50 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 4.5pF @ 5V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-G1
Package / Case : SC-70, SOT-323
0
100 in stock
2SK1374G0L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 50 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 4.5pF @ 5V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-F2
Package / Case : SC-85
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 50 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 4.5pF @ 5V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-F2
Package / Case : SC-85
0
100 in stock
2SK1518-E
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 270 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3050pF @ 10V
FET Feature : -
Power Dissipation (Max) : 120W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 270 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3050pF @ 10V
FET Feature : -
Power Dissipation (Max) : 120W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
2SK1775-E
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1730pF @ 10V
FET Feature : -
Power Dissipation (Max) : 60W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1730pF @ 10V
FET Feature : -
Power Dissipation (Max) : 60W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
2SK1828TE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 40 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 5.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-59
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 40 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 5.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-59
Package / Case : TO-236-3, SC-59, SOT-23-3
0
2015 in stock
2SK1829TE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 40 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 5.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-70
Package / Case : SC-70, SOT-323
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 40 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 5.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-70
Package / Case : SC-70, SOT-323
0
100 in stock
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