Welcome to Weijie Semiconductor
- Discrete Semiconductor Products
- Transistors - FETs, MOSFETs - Single
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
2SK1835-E
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1500V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 7 Ohm @ 2A, 15V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1700pF @ 10V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1500V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 7 Ohm @ 2A, 15V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1700pF @ 10V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
2SK1859-E
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 980pF @ 10V
FET Feature : -
Power Dissipation (Max) : 60W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 980pF @ 10V
FET Feature : -
Power Dissipation (Max) : 60W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
2SK2009TE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 50MA, 2.5V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 70pF @ 3V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-59-3
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 50MA, 2.5V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 70pF @ 3V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-59-3
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
2SK2034TE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 8.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-70
Package / Case : SC-70, SOT-323
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 8.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-70
Package / Case : SC-70, SOT-323
0
100 in stock
.jpg "Show details for 2SK2035(T5L,F,T)")
2SK2035(T5L,F,T)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 8.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSM
Package / Case : SC-75, SOT-416
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 8.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSM
Package / Case : SC-75, SOT-416
0
100 in stock
2SK2094TL
Kionix
Manufacturer : Rohm Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 350 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 400pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : CPT3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 350 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 400pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : CPT3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
2SK2095N
Kionix
Manufacturer : Rohm Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 95 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FN
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 95 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FN
Package / Case : TO-220-3 Full Pack
0
100 in stock
2SK2103T100
Kionix
Manufacturer : Rohm Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 400 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 10V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : MPT3
Package / Case : TO-243AA
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 400 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 10V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : MPT3
Package / Case : TO-243AA
0
100 in stock
2SK221100L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 87pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : MiniP3-F1
Package / Case : TO-243AA
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 87pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : MiniP3-F1
Package / Case : TO-243AA
0
100 in stock
2SK2221-E
Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
.jpg "Show details for 2SK2231(TE16R1,NQ)")
2SK2231(TE16R1,NQ)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 160 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 370pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PW-MOLD
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 160 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 370pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PW-MOLD
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
.jpg "Show details for 2SK2266(TE24R,Q)")
2SK2266(TE24R,Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 65W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-220SM
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 65W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-220SM
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
Contact Weijie
- sales@ynnelec.com
- jay@ynnelec.com
- 1132 Nanguang Jiejia Building, No. 3037 Shennan Middle Road, Futian District, Shenzhen
Customer service
Copyright © 2025 Ynnelec. All rights reserved.
webdesign www.wzdzkf.com
Powered by www.wzdzkf.com