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Part Number
Manufacturer
Description
Unit Price
In Stock
2SK3045
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 330pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220D-A1
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 330pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220D-A1
Package / Case : TO-220-3 Full Pack
0
1520 in stock
2SK3046
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220D-A1
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220D-A1
Package / Case : TO-220-3 Full Pack
0
334 in stock
2SK3047
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220D-A1
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220D-A1
Package / Case : TO-220-3 Full Pack
0
100 in stock
2SK3048
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 750pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 35W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220D-A1
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 750pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 35W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220D-A1
Package / Case : TO-220-3 Full Pack
0
216 in stock
2SK3050TL
Kionix
Manufacturer : Rohm Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 25.6nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : CPT3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 25.6nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : CPT3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
2SK306400L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 50 Ohm @ 10mA, 5V
Vgs(th) (Max) @ Id : 2V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-G1
Package / Case : SC-70, SOT-323
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 50 Ohm @ 10mA, 5V
Vgs(th) (Max) @ Id : 2V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-G1
Package / Case : SC-70, SOT-323
0
100 in stock
2SK3064G0L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 50 Ohm @ 10mA, 5V
Vgs(th) (Max) @ Id : 2V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-F2
Package / Case : SC-85
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 50 Ohm @ 10mA, 5V
Vgs(th) (Max) @ Id : 2V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-F2
Package / Case : SC-85
0
100 in stock
2SK3065T100
Kionix
Manufacturer : Rohm Semiconductor
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 320 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 160pF @ 10V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : MPT3
Package / Case : TO-243AA
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 320 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 160pF @ 10V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : MPT3
Package / Case : TO-243AA
0
13000 in stock
.jpg "Show details for 2SK3068(TE24L,Q)")
2SK3068(TE24L,Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 520 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2040pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-220SM
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 520 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2040pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-220SM
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
.jpg "Show details for 2SK3127(TE24L,Q)")
2SK3127(TE24L,Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 65W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-220SM
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 65W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-220SM
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
.jpg "Show details for 2SK3128(Q)")
2SK3128(Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
2SK3132(Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 95 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 3.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 280nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 11000pF @ 10V
FET Feature : -
Power Dissipation (Max) : 250W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(L)
Package / Case : TO-3PL
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 95 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 3.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 280nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 11000pF @ 10V
FET Feature : -
Power Dissipation (Max) : 250W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(L)
Package / Case : TO-3PL
0
100 in stock
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