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In Stock

2SK3377(0)-Z-E2-AZ 2SK3377(0)-Z-E2-AZ

Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock

2SK3377-Z-E1-AZ 2SK3377-Z-E1-AZ

Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock

2SK3377-Z-E2-AZ 2SK3377-Z-E2-AZ

Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock

2SK3385(0)-Z-E1-AZ 2SK3385(0)-Z-E1-AZ

Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock

2SK3386(0)-Z-E1-AZ 2SK3386(0)-Z-E1-AZ

Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock

2SK3388(TE24L,Q) 2SK3388(TE24L,Q)

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 105 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4000pF @ 10V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 4-TFP (9.2x9.2)
Package / Case : SC-97
0
100 in stock

2SK3402(0)-Z-E1-AZ 2SK3402(0)-Z-E1-AZ

Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock

2SK3403(Q) 2SK3403(Q)

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 450V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 400 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FL
Package / Case : TO-220-3, Short Tab
0
100 in stock

2SK3430(02)-S6-AZ 2SK3430(02)-S6-AZ

Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : -
Series : *
Part Status : Last Time Buy
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock

2SK3430-AZ 2SK3430-AZ

Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 7.3 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta), 84W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
0
100 in stock

2SK3430-Z-E1-AZ 2SK3430-Z-E1-AZ

Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tape & Reel (TR)
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 7.3 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta), 84W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
0
100 in stock

2SK3431-AZ 2SK3431-AZ

Renesas Electronics America
Manufacturer : Renesas Electronics America
Packaging : Tube
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 5.6 mOhm @ 42A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6100pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta), 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
0
100 in stock