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Part Number
Manufacturer
Description
Unit Price
In Stock
2SK3546G0L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±7V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 125mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-F2
Package / Case : SC-89, SOT-490
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±7V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 125mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SMini3-F2
Package / Case : SC-89, SOT-490
0
100 in stock
2SK3546J0L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±7V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 125mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSMini3-F1
Package / Case : SC-89, SOT-490
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±7V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 125mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSMini3-F1
Package / Case : SC-89, SOT-490
0
100 in stock
2SK354700L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±7V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSSMini3-F1
Package / Case : SOT-723
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±7V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSSMini3-F1
Package / Case : SOT-723
0
100 in stock
2SK3547G0L
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±7V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSSMini3-F2
Package / Case : SOT-723
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±7V
Input Capacitance (Ciss) (Max) @ Vds : 12pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSSMini3-F2
Package / Case : SOT-723
0
100 in stock
.jpg "Show details for 2SK3564(STA4,Q,M)")
2SK3564(STA4,Q,M)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : 蟺-MOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.3 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
Packaging : Tube
Series : 蟺-MOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.3 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
0
5 in stock
.jpg "Show details for 2SK3565(Q,M)")
2SK3565(Q,M)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : 蟺-MOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
Packaging : Tube
Series : 蟺-MOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
0
100 in stock
.jpg "Show details for 2SK3566(STA4,Q,M)")
2SK3566(STA4,Q,M)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : 蟺-MOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.4 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 470pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
Packaging : Tube
Series : 蟺-MOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.4 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 470pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
0
100 in stock
.jpg "Show details for 2SK3662(F)")
2SK3662(F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : U-MOSIII
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 12.5 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5120pF @ 10V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220NIS
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : U-MOSIII
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 12.5 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5120pF @ 10V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220NIS
Package / Case : TO-220-3 Full Pack
0
100 in stock
.jpg "Show details for 2SK3670(F,M)")
2SK3670(F,M)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
0
100 in stock
2SK3670(T6CANO,A,F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
0
100 in stock
2SK3670(T6CANO,F,M
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
0
100 in stock
2SK3670,F(J
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
0
100 in stock
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