Transistors - FETs, MOSFETs - Single Products, Stocks, Distributors, Manufactor, Shopping, Company,Electronic Components Online store

Image

Part Number

Manufacturer

Description

Unit Price

In Stock

2N7002ET3G

Aptina / ON Semiconductor

Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.81nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 26.7pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300mW (Tj)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3

100 in stock

2N7002F,215

Nexperia

Manufacturer : Nexperia USA Inc.
Packaging : Tape & Reel (TR)
Series : TrenchMOS™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 475mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.69nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 10V
FET Feature : -
Power Dissipation (Max) : 830mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236AB (SOT23)
Package / Case : TO-236-3, SC-59, SOT-23-3

100 in stock

2N7002-G

Microchip Technology

Manufacturer : Microchip Technology
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 115mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 360mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23 (TO-236AB)
Package / Case : TO-236-3, SC-59, SOT-23-3

10644 in stock

2N7002H6327XTSA2

International Rectifier (Infineon Technologies)

Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 20pF @ 25V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3

100 in stock

2N7002H-7

Diodes Incorporated

Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.35nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 26pF @ 25V
FET Feature : -
Power Dissipation (Max) : 370mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23
Package / Case : TO-236-3, SC-59, SOT-23-3

2999 in stock

2N7002-HF

Comchip Technology

Manufacturer : Comchip Technology
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 1nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 25pF @ 25V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23
Package / Case : TO-236-3, SC-59, SOT-23-3

382 in stock

2N7002K

Aptina / ON Semiconductor

Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23 (TO-236AB)
Package / Case : TO-236-3, SC-59, SOT-23-3

100 in stock

2N7002K,215

NXP Semiconductors / Freescale

Manufacturer : NXP USA Inc.
Packaging : Tape & Reel (TR)
Series : TrenchMOS™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.9 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±15V
Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 10V
FET Feature : -
Power Dissipation (Max) : 830mW (Ta)
Operating Temperature : -65°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236AB (SOT23)
Package / Case : TO-236-3, SC-59, SOT-23-3

100 in stock

2N7002K-7

Diodes Incorporated

Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 0.3nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 370mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3

100 in stock

2N7002KA-TP

Micro Commercial Components (MCC)

Manufacturer : Micro Commercial Co
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 340mA
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 10V
FET Feature : -
Power Dissipation (Max) : 350mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23
Package / Case : TO-236-3, SC-59, SOT-23-3

100 in stock

2N7002K-T1-E3

Electro-Films (EFI) / Vishay

Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 30pF @ 25V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3

100 in stock

2N7002KT1G

Aptina / ON Semiconductor

Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.7nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 24.5pF @ 20V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3

56978 in stock