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Part Number
Manufacturer
Description
Unit Price
In Stock
APT20GN60BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 40A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 1.9V @ 15V, 20A
Power - Max : 136W
Switching Energy : 230µJ (on), 580µJ (off)
Input Type : Standard
Gate Charge : 120nC
Td (on/off) @ 25°C : 9ns/140ns
Test Condition : 400V, 20A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 40A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 1.9V @ 15V, 20A
Power - Max : 136W
Switching Energy : 230µJ (on), 580µJ (off)
Input Type : Standard
Gate Charge : 120nC
Td (on/off) @ 25°C : 9ns/140ns
Test Condition : 400V, 20A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT20GT60BRDQ1G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 43A
Current - Collector Pulsed (Icm) : 80A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Power - Max : 174W
Switching Energy : 215µJ (on), 245µJ (off)
Input Type : Standard
Gate Charge : 100nC
Td (on/off) @ 25°C : 8ns/80ns
Test Condition : 400V, 20A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 43A
Current - Collector Pulsed (Icm) : 80A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Power - Max : 174W
Switching Energy : 215µJ (on), 245µJ (off)
Input Type : Standard
Gate Charge : 100nC
Td (on/off) @ 25°C : 8ns/80ns
Test Condition : 400V, 20A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
54 in stock
APT20GT60BRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 43A
Current - Collector Pulsed (Icm) : 80A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Power - Max : 174W
Switching Energy : 215µJ (on), 245µJ (off)
Input Type : Standard
Gate Charge : 100nC
Td (on/off) @ 25°C : 8ns/80ns
Test Condition : 400V, 20A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 43A
Current - Collector Pulsed (Icm) : 80A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Power - Max : 174W
Switching Energy : 215µJ (on), 245µJ (off)
Input Type : Standard
Gate Charge : 100nC
Td (on/off) @ 25°C : 8ns/80ns
Test Condition : 400V, 20A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT25GN120BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 67A
Current - Collector Pulsed (Icm) : 75A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 25A
Power - Max : 272W
Switching Energy : 2.15µJ (off)
Input Type : Standard
Gate Charge : 155nC
Td (on/off) @ 25°C : 22ns/280ns
Test Condition : 800V, 25A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 67A
Current - Collector Pulsed (Icm) : 75A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 25A
Power - Max : 272W
Switching Energy : 2.15µJ (off)
Input Type : Standard
Gate Charge : 155nC
Td (on/off) @ 25°C : 22ns/280ns
Test Condition : 800V, 25A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
13 in stock
APT25GN120SG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 67A
Current - Collector Pulsed (Icm) : 75A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 25A
Power - Max : 272W
Switching Energy : -
Input Type : Standard
Gate Charge : 155nC
Td (on/off) @ 25°C : 22ns/280ns
Test Condition : 800V, 25A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Supplier Device Package : D3Pak
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 67A
Current - Collector Pulsed (Icm) : 75A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 25A
Power - Max : 272W
Switching Energy : -
Input Type : Standard
Gate Charge : 155nC
Td (on/off) @ 25°C : 22ns/280ns
Test Condition : 800V, 25A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Supplier Device Package : D3Pak
0
303 in stock
APT25GP120BDQ1G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 69A
Current - Collector Pulsed (Icm) : 90A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A
Power - Max : 417W
Switching Energy : 500µJ (on), 440µJ (off)
Input Type : Standard
Gate Charge : 110nC
Td (on/off) @ 25°C : 12ns/70ns
Test Condition : 600V, 25A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 69A
Current - Collector Pulsed (Icm) : 90A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A
Power - Max : 417W
Switching Energy : 500µJ (on), 440µJ (off)
Input Type : Standard
Gate Charge : 110nC
Td (on/off) @ 25°C : 12ns/70ns
Test Condition : 600V, 25A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT25GP90BDQ1G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 72A
Current - Collector Pulsed (Icm) : 110A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A
Power - Max : 417W
Switching Energy : 370µJ (off)
Input Type : Standard
Gate Charge : 110nC
Td (on/off) @ 25°C : 13ns/55ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 72A
Current - Collector Pulsed (Icm) : 110A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A
Power - Max : 417W
Switching Energy : 370µJ (off)
Input Type : Standard
Gate Charge : 110nC
Td (on/off) @ 25°C : 13ns/55ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT25GP90BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 72A
Current - Collector Pulsed (Icm) : 110A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A
Power - Max : 417W
Switching Energy : 370µJ (off)
Input Type : Standard
Gate Charge : 110nC
Td (on/off) @ 25°C : 13ns/55ns
Test Condition : 600V, 25A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 72A
Current - Collector Pulsed (Icm) : 110A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A
Power - Max : 417W
Switching Energy : 370µJ (off)
Input Type : Standard
Gate Charge : 110nC
Td (on/off) @ 25°C : 13ns/55ns
Test Condition : 600V, 25A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT25GR120B
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 75A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A
Power - Max : 521W
Switching Energy : 742µJ (on), 427µJ (off)
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 600V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Bulk
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 75A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A
Power - Max : 521W
Switching Energy : 742µJ (on), 427µJ (off)
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 600V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
583 in stock
APT25GR120BD15
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 75A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A
Power - Max : 521W
Switching Energy : 742µJ (on), 427µJ (off)
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 600V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 75A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A
Power - Max : 521W
Switching Energy : 742µJ (on), 427µJ (off)
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 600V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
68 in stock
APT25GR120BSCD10
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 75A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A
Power - Max : 521W
Switching Energy : 434µJ (on), 466µJ (off)
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 600V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 75A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A
Power - Max : 521W
Switching Energy : 434µJ (on), 466µJ (off)
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 600V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
100 in stock
APT25GR120S
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 75A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A
Power - Max : 521W
Switching Energy : 742µJ (on), 427µJ (off)
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 600V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Supplier Device Package : D3Pak
Packaging : Bulk
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 75A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A
Power - Max : 521W
Switching Energy : 742µJ (on), 427µJ (off)
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 600V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Supplier Device Package : D3Pak
0
2 in stock
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