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Part Number
Manufacturer
Description
Unit Price
In Stock
APT30GT60KRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 64A
Current - Collector Pulsed (Icm) : 110A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 30A
Power - Max : 250W
Switching Energy : 525µJ (on), 600µJ (off)
Input Type : Standard
Gate Charge : 145nC
Td (on/off) @ 25°C : 12ns/225ns
Test Condition : 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 64A
Current - Collector Pulsed (Icm) : 110A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 30A
Power - Max : 250W
Switching Energy : 525µJ (on), 600µJ (off)
Input Type : Standard
Gate Charge : 145nC
Td (on/off) @ 25°C : 12ns/225ns
Test Condition : 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
0
100 in stock
APT33GF120B2RDQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 64A
Current - Collector Pulsed (Icm) : 75A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 25A
Power - Max : 357W
Switching Energy : 1.315µJ (on), 1.515µJ (off)
Input Type : Standard
Gate Charge : 170nC
Td (on/off) @ 25°C : 14ns/185ns
Test Condition : 800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 64A
Current - Collector Pulsed (Icm) : 75A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 25A
Power - Max : 357W
Switching Energy : 1.315µJ (on), 1.515µJ (off)
Input Type : Standard
Gate Charge : 170nC
Td (on/off) @ 25°C : 14ns/185ns
Test Condition : 800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
16 in stock
APT33GF120BRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 52A
Current - Collector Pulsed (Icm) : 104A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A
Power - Max : 297W
Switching Energy : 2.8mJ (on), 2.8mJ (off)
Input Type : Standard
Gate Charge : 170nC
Td (on/off) @ 25°C : 25ns/210ns
Test Condition : -
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 52A
Current - Collector Pulsed (Icm) : 104A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A
Power - Max : 297W
Switching Energy : 2.8mJ (on), 2.8mJ (off)
Input Type : Standard
Gate Charge : 170nC
Td (on/off) @ 25°C : 25ns/210ns
Test Condition : -
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
123 in stock
APT33GF120LRDQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 64A
Current - Collector Pulsed (Icm) : 75A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 25A
Power - Max : 357W
Switching Energy : 1.315mJ (on), 1.515mJ (off)
Input Type : Standard
Gate Charge : 170nC
Td (on/off) @ 25°C : 14ns/185ns
Test Condition : 800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264 [L]
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 64A
Current - Collector Pulsed (Icm) : 75A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 25A
Power - Max : 357W
Switching Energy : 1.315mJ (on), 1.515mJ (off)
Input Type : Standard
Gate Charge : 170nC
Td (on/off) @ 25°C : 14ns/185ns
Test Condition : 800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264 [L]
0
100 in stock
APT35GA90BD15
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 63A
Current - Collector Pulsed (Icm) : 105A
Vce(on) (Max) @ Vge, Ic : 3.1V @ 15V, 18A
Power - Max : 290W
Switching Energy : 642µJ (on), 382µJ (off)
Input Type : Standard
Gate Charge : 84nC
Td (on/off) @ 25°C : 12ns/104ns
Test Condition : 600V, 18A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 63A
Current - Collector Pulsed (Icm) : 105A
Vce(on) (Max) @ Vge, Ic : 3.1V @ 15V, 18A
Power - Max : 290W
Switching Energy : 642µJ (on), 382µJ (off)
Input Type : Standard
Gate Charge : 84nC
Td (on/off) @ 25°C : 12ns/104ns
Test Condition : 600V, 18A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
77 in stock
APT35GN120BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 94A
Current - Collector Pulsed (Icm) : 105A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 35A
Power - Max : 379W
Switching Energy : 2.315mJ (off)
Input Type : Standard
Gate Charge : 220nC
Td (on/off) @ 25°C : 24ns/300ns
Test Condition : 800V, 35A, 2.2 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 94A
Current - Collector Pulsed (Icm) : 105A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 35A
Power - Max : 379W
Switching Energy : 2.315mJ (off)
Input Type : Standard
Gate Charge : 220nC
Td (on/off) @ 25°C : 24ns/300ns
Test Condition : 800V, 35A, 2.2 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
65 in stock
APT35GN120L2DQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 94A
Current - Collector Pulsed (Icm) : 105A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 35A
Power - Max : 379W
Switching Energy : 2.315mJ (off)
Input Type : Standard
Gate Charge : 220nC
Td (on/off) @ 25°C : 24ns/300ns
Test Condition : 800V, 35A, 2.2 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : -
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 94A
Current - Collector Pulsed (Icm) : 105A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 35A
Power - Max : 379W
Switching Energy : 2.315mJ (off)
Input Type : Standard
Gate Charge : 220nC
Td (on/off) @ 25°C : 24ns/300ns
Test Condition : 800V, 35A, 2.2 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : -
0
52 in stock
APT35GP120B2DQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 96A
Current - Collector Pulsed (Icm) : 140A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 35A
Power - Max : 543W
Switching Energy : 750µJ (on), 680µJ (off)
Input Type : Standard
Gate Charge : 150nC
Td (on/off) @ 25°C : 16ns/95ns
Test Condition : 600V, 35A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 96A
Current - Collector Pulsed (Icm) : 140A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 35A
Power - Max : 543W
Switching Energy : 750µJ (on), 680µJ (off)
Input Type : Standard
Gate Charge : 150nC
Td (on/off) @ 25°C : 16ns/95ns
Test Condition : 600V, 35A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
16 in stock
APT35GP120BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 96A
Current - Collector Pulsed (Icm) : 140A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 35A
Power - Max : 543W
Switching Energy : 750µJ (on), 680µJ (off)
Input Type : Standard
Gate Charge : 150nC
Td (on/off) @ 25°C : 16ns/94ns
Test Condition : 600V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 96A
Current - Collector Pulsed (Icm) : 140A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 35A
Power - Max : 543W
Switching Energy : 750µJ (on), 680µJ (off)
Input Type : Standard
Gate Charge : 150nC
Td (on/off) @ 25°C : 16ns/94ns
Test Condition : 600V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
20 in stock
APT36GA60B
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 8™
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 65A
Current - Collector Pulsed (Icm) : 109A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Power - Max : 290W
Switching Energy : 307µJ (on), 254µJ (off)
Input Type : Standard
Gate Charge : 102nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 8™
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 65A
Current - Collector Pulsed (Icm) : 109A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Power - Max : 290W
Switching Energy : 307µJ (on), 254µJ (off)
Input Type : Standard
Gate Charge : 102nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
97 in stock
APT36GA60BD15
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 8™
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 65A
Current - Collector Pulsed (Icm) : 109A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Power - Max : 290W
Switching Energy : 307µJ (on), 254µJ (off)
Input Type : Standard
Gate Charge : 18nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 8™
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 65A
Current - Collector Pulsed (Icm) : 109A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Power - Max : 290W
Switching Energy : 307µJ (on), 254µJ (off)
Input Type : Standard
Gate Charge : 18nC
Td (on/off) @ 25°C : 16ns/122ns
Test Condition : 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
12 in stock
APT40GP60B2DQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 40A
Power - Max : 543W
Switching Energy : 385µJ (on), 350µJ (off)
Input Type : Standard
Gate Charge : 135nC
Td (on/off) @ 25°C : 20ns/64ns
Test Condition : 400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 40A
Power - Max : 543W
Switching Energy : 385µJ (on), 350µJ (off)
Input Type : Standard
Gate Charge : 135nC
Td (on/off) @ 25°C : 20ns/64ns
Test Condition : 400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
100 in stock
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