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Part Number
Manufacturer
Description
Unit Price
In Stock
APT40GP60BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 40A
Power - Max : 543W
Switching Energy : 385µJ (on), 352µJ (off)
Input Type : Standard
Gate Charge : 135nC
Td (on/off) @ 25°C : 20ns/64ns
Test Condition : 400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 40A
Power - Max : 543W
Switching Energy : 385µJ (on), 352µJ (off)
Input Type : Standard
Gate Charge : 135nC
Td (on/off) @ 25°C : 20ns/64ns
Test Condition : 400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT40GP60SG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 40A
Power - Max : 543W
Switching Energy : 385µJ (on), 352µJ (off)
Input Type : Standard
Gate Charge : 135nC
Td (on/off) @ 25°C : 20ns/64ns
Test Condition : 400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Supplier Device Package : D3 [S]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 40A
Power - Max : 543W
Switching Energy : 385µJ (on), 352µJ (off)
Input Type : Standard
Gate Charge : 135nC
Td (on/off) @ 25°C : 20ns/64ns
Test Condition : 400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Supplier Device Package : D3 [S]
0
100 in stock
APT40GP90B2DQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 101A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 40A
Power - Max : 543W
Switching Energy : 795µJ (off)
Input Type : Standard
Gate Charge : 145nC
Td (on/off) @ 25°C : 14ns/90ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 101A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 40A
Power - Max : 543W
Switching Energy : 795µJ (off)
Input Type : Standard
Gate Charge : 145nC
Td (on/off) @ 25°C : 14ns/90ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
100 in stock
APT40GP90BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 40A
Power - Max : 543W
Switching Energy : 825µJ (off)
Input Type : Standard
Gate Charge : 145nC
Td (on/off) @ 25°C : 16ns/75ns
Test Condition : 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 40A
Power - Max : 543W
Switching Energy : 825µJ (off)
Input Type : Standard
Gate Charge : 145nC
Td (on/off) @ 25°C : 16ns/75ns
Test Condition : 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
29 in stock
APT40GR120B
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 88A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 40A
Power - Max : 500W
Switching Energy : 1.38mJ (on), 906µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 22ns/163ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 88A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 40A
Power - Max : 500W
Switching Energy : 1.38mJ (on), 906µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 22ns/163ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
0
100 in stock
APT40GR120B2D30
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 88A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 40A
Power - Max : 500W
Switching Energy : 1.38mJ (on), 906µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 22ns/163ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 88A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 40A
Power - Max : 500W
Switching Energy : 1.38mJ (on), 906µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 22ns/163ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
0
27 in stock
APT40GR120B2SCD10
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 88A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 40A
Power - Max : 500W
Switching Energy : 929µJ (on), 1070µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 20ns/166ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 88A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 40A
Power - Max : 500W
Switching Energy : 929µJ (on), 1070µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 20ns/166ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
100 in stock
APT40GT60BRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 80A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 40A
Power - Max : 345W
Switching Energy : 828µJ (off)
Input Type : Standard
Gate Charge : 200nC
Td (on/off) @ 25°C : 12ns/124ns
Test Condition : 400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 80A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 40A
Power - Max : 345W
Switching Energy : 828µJ (off)
Input Type : Standard
Gate Charge : 200nC
Td (on/off) @ 25°C : 12ns/124ns
Test Condition : 400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
733 in stock
APT43GA90B
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 8™
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 78A
Current - Collector Pulsed (Icm) : 129A
Vce(on) (Max) @ Vge, Ic : 3.1V @ 15V, 25A
Power - Max : 337W
Switching Energy : 875µJ (on), 425µJ (off)
Input Type : Standard
Gate Charge : 116nC
Td (on/off) @ 25°C : 12ns/82ns
Test Condition : 600V, 25A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 8™
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 78A
Current - Collector Pulsed (Icm) : 129A
Vce(on) (Max) @ Vge, Ic : 3.1V @ 15V, 25A
Power - Max : 337W
Switching Energy : 875µJ (on), 425µJ (off)
Input Type : Standard
Gate Charge : 116nC
Td (on/off) @ 25°C : 12ns/82ns
Test Condition : 600V, 25A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
41 in stock
APT43GA90BD30
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 78A
Current - Collector Pulsed (Icm) : 129A
Vce(on) (Max) @ Vge, Ic : 3.1V @ 15V, 47A
Power - Max : 337W
Switching Energy : 875µJ (on), 425µJ (off)
Input Type : Standard
Gate Charge : 116nC
Td (on/off) @ 25°C : 12ns/82ns
Test Condition : 600V, 25A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 78A
Current - Collector Pulsed (Icm) : 129A
Vce(on) (Max) @ Vge, Ic : 3.1V @ 15V, 47A
Power - Max : 337W
Switching Energy : 875µJ (on), 425µJ (off)
Input Type : Standard
Gate Charge : 116nC
Td (on/off) @ 25°C : 12ns/82ns
Test Condition : 600V, 25A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
48 in stock
APT44GA60B
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 8™
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 78A
Current - Collector Pulsed (Icm) : 130A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 26A
Power - Max : 337W
Switching Energy : 409µJ (on), 258µJ (off)
Input Type : Standard
Gate Charge : 128nC
Td (on/off) @ 25°C : 16ns/84ns
Test Condition : 400V, 26A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 8™
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 78A
Current - Collector Pulsed (Icm) : 130A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 26A
Power - Max : 337W
Switching Energy : 409µJ (on), 258µJ (off)
Input Type : Standard
Gate Charge : 128nC
Td (on/off) @ 25°C : 16ns/84ns
Test Condition : 400V, 26A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT44GA60BD30C
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 8™
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 78A
Current - Collector Pulsed (Icm) : 130A
Vce(on) (Max) @ Vge, Ic : 1.6V @ 15V, 26A
Power - Max : 337W
Switching Energy : 409µJ (on), 450µJ (off)
Input Type : Standard
Gate Charge : 128nC
Td (on/off) @ 25°C : 16ns/102ns
Test Condition : 400V, 26A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 8™
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 78A
Current - Collector Pulsed (Icm) : 130A
Vce(on) (Max) @ Vge, Ic : 1.6V @ 15V, 26A
Power - Max : 337W
Switching Energy : 409µJ (on), 450µJ (off)
Input Type : Standard
Gate Charge : 128nC
Td (on/off) @ 25°C : 16ns/102ns
Test Condition : 400V, 26A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
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