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Part Number
Manufacturer
Description
Unit Price
In Stock
APT50GS60BRDQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 93A
Current - Collector Pulsed (Icm) : 195A
Vce(on) (Max) @ Vge, Ic : 3.15V @ 15V, 50A
Power - Max : 415W
Switching Energy : 755µJ (off)
Input Type : Standard
Gate Charge : 235nC
Td (on/off) @ 25°C : 16ns/225ns
Test Condition : 400V, 40A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : 25ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 93A
Current - Collector Pulsed (Icm) : 195A
Vce(on) (Max) @ Vge, Ic : 3.15V @ 15V, 50A
Power - Max : 415W
Switching Energy : 755µJ (off)
Input Type : Standard
Gate Charge : 235nC
Td (on/off) @ 25°C : 16ns/225ns
Test Condition : 400V, 40A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : 25ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
4312 in stock
APT50GT120B2RDLG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 106A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 3.7V @ 15V, 50A
Power - Max : 694W
Switching Energy : 3585µJ (on), 1910µJ (off)
Input Type : Standard
Gate Charge : 240nC
Td (on/off) @ 25°C : 23ns/215ns
Test Condition : 800V, 50A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 106A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 3.7V @ 15V, 50A
Power - Max : 694W
Switching Energy : 3585µJ (on), 1910µJ (off)
Input Type : Standard
Gate Charge : 240nC
Td (on/off) @ 25°C : 23ns/215ns
Test Condition : 800V, 50A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
8 in stock
APT50GT120B2RG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 94A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 3.7V @ 15V, 50A
Power - Max : 625W
Switching Energy : 2330µJ (off)
Input Type : Standard
Gate Charge : 340nC
Td (on/off) @ 25°C : 24ns/230ns
Test Condition : 800V, 50A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : -
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 94A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 3.7V @ 15V, 50A
Power - Max : 625W
Switching Energy : 2330µJ (off)
Input Type : Standard
Gate Charge : 340nC
Td (on/off) @ 25°C : 24ns/230ns
Test Condition : 800V, 50A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : -
0
294 in stock
APT50GT60BRDQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 110A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 50A
Power - Max : 446W
Switching Energy : 995µJ (on), 1070µJ (off)
Input Type : Standard
Gate Charge : 240nC
Td (on/off) @ 25°C : 14ns/240ns
Test Condition : 400V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr) : 22ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 110A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 50A
Power - Max : 446W
Switching Energy : 995µJ (on), 1070µJ (off)
Input Type : Standard
Gate Charge : 240nC
Td (on/off) @ 25°C : 14ns/240ns
Test Condition : 400V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr) : 22ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
75 in stock
APT50GT60BRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 110A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 50A
Power - Max : 446W
Switching Energy : 995µJ (on), 1070µJ (off)
Input Type : Standard
Gate Charge : 240nC
Td (on/off) @ 25°C : 14ns/240ns
Test Condition : 400V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 110A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 50A
Power - Max : 446W
Switching Energy : 995µJ (on), 1070µJ (off)
Input Type : Standard
Gate Charge : 240nC
Td (on/off) @ 25°C : 14ns/240ns
Test Condition : 400V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
45 in stock
APT60GT60BRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 360A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 60A
Power - Max : 500W
Switching Energy : 3.4mJ
Input Type : Standard
Gate Charge : 275nC
Td (on/off) @ 25°C : 26ns/395ns
Test Condition : -
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 360A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 60A
Power - Max : 500W
Switching Energy : 3.4mJ
Input Type : Standard
Gate Charge : 275nC
Td (on/off) @ 25°C : 26ns/395ns
Test Condition : -
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
3886 in stock
APT64GA90B2D30
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 8?br/>Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 117A
Current - Collector Pulsed (Icm) : 193A
Vce(on) (Max) @ Vge, Ic : 3.1V @ 15V, 38A
Power - Max : 500W
Switching Energy : 1192µJ (on), 1088µJ (off)
Input Type : Standard
Gate Charge : 162nC
Td (on/off) @ 25°C : 18ns/131ns
Test Condition : 600V, 38A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : POWER MOS 8?br/>Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 117A
Current - Collector Pulsed (Icm) : 193A
Vce(on) (Max) @ Vge, Ic : 3.1V @ 15V, 38A
Power - Max : 500W
Switching Energy : 1192µJ (on), 1088µJ (off)
Input Type : Standard
Gate Charge : 162nC
Td (on/off) @ 25°C : 18ns/131ns
Test Condition : 600V, 38A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
2 in stock
APT65GP60B2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 250A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 65A
Power - Max : 833W
Switching Energy : 605µJ (on), 896µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 30ns/91ns
Test Condition : 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 250A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 65A
Power - Max : 833W
Switching Energy : 605µJ (on), 896µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 30ns/91ns
Test Condition : 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
119 in stock
APT65GP60L2DQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 198A
Current - Collector Pulsed (Icm) : 250A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 65A
Power - Max : 833W
Switching Energy : 605µJ (on), 895µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 30ns/90ns
Test Condition : 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : -
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 198A
Current - Collector Pulsed (Icm) : 250A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 65A
Power - Max : 833W
Switching Energy : 605µJ (on), 895µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 30ns/90ns
Test Condition : 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : -
0
100 in stock
APT68GA60B
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 8?br/>Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 121A
Current - Collector Pulsed (Icm) : 202A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 40A
Power - Max : 520W
Switching Energy : 715µJ (on), 607µJ (off)
Input Type : Standard
Gate Charge : 298nC
Td (on/off) @ 25°C : 21ns/133ns
Test Condition : 400V, 40A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 8?br/>Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 121A
Current - Collector Pulsed (Icm) : 202A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 40A
Power - Max : 520W
Switching Energy : 715µJ (on), 607µJ (off)
Input Type : Standard
Gate Charge : 298nC
Td (on/off) @ 25°C : 21ns/133ns
Test Condition : 400V, 40A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
23 in stock
APT70GR120L
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 160A
Current - Collector Pulsed (Icm) : 280A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 70A
Power - Max : 961W
Switching Energy : 3.82mJ (on), 2.58mJ (off)
Input Type : Standard
Gate Charge : 544nC
Td (on/off) @ 25°C : 33ns/278ns
Test Condition : 600V, 70A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 160A
Current - Collector Pulsed (Icm) : 280A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 70A
Power - Max : 961W
Switching Energy : 3.82mJ (on), 2.58mJ (off)
Input Type : Standard
Gate Charge : 544nC
Td (on/off) @ 25°C : 33ns/278ns
Test Condition : 600V, 70A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
0
3 in stock
APT70GR65B
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 134A
Current - Collector Pulsed (Icm) : 260A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 70A
Power - Max : 595W
Switching Energy : 1.51mJ (on), 1.46mJ (off)
Input Type : Standard
Gate Charge : 305nC
Td (on/off) @ 25°C : 19ns/170ns
Test Condition : 433V, 70A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 134A
Current - Collector Pulsed (Icm) : 260A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 70A
Power - Max : 595W
Switching Energy : 1.51mJ (on), 1.46mJ (off)
Input Type : Standard
Gate Charge : 305nC
Td (on/off) @ 25°C : 19ns/170ns
Test Condition : 433V, 70A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
19 in stock
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