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Part Number
Manufacturer
Description
Unit Price
In Stock
APT45GP120B2DQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 113A
Current - Collector Pulsed (Icm) : 170A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 45A
Power - Max : 625W
Switching Energy : 900µJ (on), 905µJ (off)
Input Type : Standard
Gate Charge : 185nC
Td (on/off) @ 25°C : 18ns/100ns
Test Condition : 600V, 45A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 113A
Current - Collector Pulsed (Icm) : 170A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 45A
Power - Max : 625W
Switching Energy : 900µJ (on), 905µJ (off)
Input Type : Standard
Gate Charge : 185nC
Td (on/off) @ 25°C : 18ns/100ns
Test Condition : 600V, 45A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
106 in stock
APT45GP120BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 170A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 45A
Power - Max : 625W
Switching Energy : 900µJ (on), 904µJ (off)
Input Type : Standard
Gate Charge : 185nC
Td (on/off) @ 25°C : 18ns/102ns
Test Condition : 600V, 45A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 170A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 45A
Power - Max : 625W
Switching Energy : 900µJ (on), 904µJ (off)
Input Type : Standard
Gate Charge : 185nC
Td (on/off) @ 25°C : 18ns/102ns
Test Condition : 600V, 45A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
30 in stock
APT45GR65B
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 92A
Current - Collector Pulsed (Icm) : 168A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 45A
Power - Max : 357W
Switching Energy : 900µJ (on), 580µJ (off)
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 15ns/100ns
Test Condition : 433V, 45A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 92A
Current - Collector Pulsed (Icm) : 168A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 45A
Power - Max : 357W
Switching Energy : 900µJ (on), 580µJ (off)
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 15ns/100ns
Test Condition : 433V, 45A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
57 in stock
APT45GR65BSCD10
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 118A
Current - Collector Pulsed (Icm) : 224A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 45A
Power - Max : 543W
Switching Energy : -
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 15ns/100ns
Test Condition : 433V, 45A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : 80ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Bulk
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 118A
Current - Collector Pulsed (Icm) : 224A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 45A
Power - Max : 543W
Switching Energy : -
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 15ns/100ns
Test Condition : 433V, 45A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : 80ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
100 in stock
APT45GR65SSCD10
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 118A
Current - Collector Pulsed (Icm) : 224A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 45A
Power - Max : 543W
Switching Energy : -
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 15ns/100ns
Test Condition : 433V, 45A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : 80ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : D3Pak
Packaging : Bulk
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 118A
Current - Collector Pulsed (Icm) : 224A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 45A
Power - Max : 543W
Switching Energy : -
Input Type : Standard
Gate Charge : 203nC
Td (on/off) @ 25°C : 15ns/100ns
Test Condition : 433V, 45A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : 80ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : D3Pak
0
100 in stock
APT50GF120LRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 135A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 50A
Power - Max : 781W
Switching Energy : 3.6mJ (on), 2.64mJ (off)
Input Type : Standard
Gate Charge : 340nC
Td (on/off) @ 25°C : 25ns/260ns
Test Condition : 800V, 50A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264 [L]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 135A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 50A
Power - Max : 781W
Switching Energy : 3.6mJ (on), 2.64mJ (off)
Input Type : Standard
Gate Charge : 340nC
Td (on/off) @ 25°C : 25ns/260ns
Test Condition : 800V, 50A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264 [L]
0
95 in stock
APT50GN120B2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 134A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 50A
Power - Max : 543W
Switching Energy : 4495µJ (off)
Input Type : Standard
Gate Charge : 315nC
Td (on/off) @ 25°C : 28ns/320ns
Test Condition : 800V, 50A, 2.2 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 134A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 50A
Power - Max : 543W
Switching Energy : 4495µJ (off)
Input Type : Standard
Gate Charge : 315nC
Td (on/off) @ 25°C : 28ns/320ns
Test Condition : 800V, 50A, 2.2 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
19 in stock
APT50GN120L2DQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 134A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 50A
Power - Max : 543W
Switching Energy : 4495µJ (off)
Input Type : Standard
Gate Charge : 315nC
Td (on/off) @ 25°C : 28ns/320ns
Test Condition : 800V, 50A, 2.2 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : -
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 134A
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 50A
Power - Max : 543W
Switching Energy : 4495µJ (off)
Input Type : Standard
Gate Charge : 315nC
Td (on/off) @ 25°C : 28ns/320ns
Test Condition : 800V, 50A, 2.2 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : -
0
111 in stock
APT50GP60B2DQ2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 150A
Current - Collector Pulsed (Icm) : 190A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 50A
Power - Max : 625W
Switching Energy : 465µJ (on), 635µJ (off)
Input Type : Standard
Gate Charge : 165nC
Td (on/off) @ 25°C : 19ns/85ns
Test Condition : 400V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 150A
Current - Collector Pulsed (Icm) : 190A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 50A
Power - Max : 625W
Switching Energy : 465µJ (on), 635µJ (off)
Input Type : Standard
Gate Charge : 165nC
Td (on/off) @ 25°C : 19ns/85ns
Test Condition : 400V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
100 in stock
APT50GP60BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 190A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 50A
Power - Max : 625W
Switching Energy : 465µJ (on), 637µJ (off)
Input Type : Standard
Gate Charge : 165nC
Td (on/off) @ 25°C : 19ns/83ns
Test Condition : 400V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 190A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 50A
Power - Max : 625W
Switching Energy : 465µJ (on), 637µJ (off)
Input Type : Standard
Gate Charge : 165nC
Td (on/off) @ 25°C : 19ns/83ns
Test Condition : 400V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT50GP60LDLG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 150A
Current - Collector Pulsed (Icm) : 190A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 50A
Power - Max : 625W
Switching Energy : 456µJ (on), 635µJ (off)
Input Type : Standard
Gate Charge : 165nC
Td (on/off) @ 25°C : 19ns/85ns
Test Condition : 400V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 150A
Current - Collector Pulsed (Icm) : 190A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 50A
Power - Max : 625W
Switching Energy : 456µJ (on), 635µJ (off)
Input Type : Standard
Gate Charge : 165nC
Td (on/off) @ 25°C : 19ns/85ns
Test Condition : 400V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
0
100 in stock
APT50GR120B2
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 117A
Current - Collector Pulsed (Icm) : 200A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 50A
Power - Max : 694W
Switching Energy : 2.14mJ (on), 1.48mJ (off)
Input Type : Standard
Gate Charge : 445nC
Td (on/off) @ 25°C : 28ns/237ns
Test Condition : 600V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 117A
Current - Collector Pulsed (Icm) : 200A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 50A
Power - Max : 694W
Switching Energy : 2.14mJ (on), 1.48mJ (off)
Input Type : Standard
Gate Charge : 445nC
Td (on/off) @ 25°C : 28ns/237ns
Test Condition : 600V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
8 in stock
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