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Part Number
Manufacturer
Description
Unit Price
In Stock
FGY120T65SPD-F085
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tube
Series : Automotive, AEC-Q101
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 240A
Current - Collector Pulsed (Icm) : 378A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 120A
Power - Max : 882W
Switching Energy : 6.8µJ (on), 3.5µJ (off)
Input Type : Standard
Gate Charge : 162nC
Td (on/off) @ 25°C : 53ns/102ns
Test Condition : 400V, 120A, 5 Ohm, 15V
Reverse Recovery Time (trr) : 123ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Exposed Pad
Supplier Device Package : PowerTO-247-3
Packaging : Tube
Series : Automotive, AEC-Q101
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 240A
Current - Collector Pulsed (Icm) : 378A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 120A
Power - Max : 882W
Switching Energy : 6.8µJ (on), 3.5µJ (off)
Input Type : Standard
Gate Charge : 162nC
Td (on/off) @ 25°C : 53ns/102ns
Test Condition : 400V, 120A, 5 Ohm, 15V
Reverse Recovery Time (trr) : 123ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Exposed Pad
Supplier Device Package : PowerTO-247-3
0
3 in stock
FGY160T65SPD-F085
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tube
Series : Automotive, AEC-Q101
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 240A
Current - Collector Pulsed (Icm) : 480A
Vce(on) (Max) @ Vge, Ic : 2.05V @ 15V, 160A
Power - Max : 882W
Switching Energy : 12.4mJ (on), 5.7mJ (off)
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 53ns/98ns
Test Condition : 400V, 160A, 15V
Reverse Recovery Time (trr) : 132ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Tube
Series : Automotive, AEC-Q101
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 240A
Current - Collector Pulsed (Icm) : 480A
Vce(on) (Max) @ Vge, Ic : 2.05V @ 15V, 160A
Power - Max : 882W
Switching Energy : 12.4mJ (on), 5.7mJ (off)
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 53ns/98ns
Test Condition : 400V, 160A, 15V
Reverse Recovery Time (trr) : 132ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
100 in stock
FGY40T120SMD
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 80A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 40A
Power - Max : 882W
Switching Energy : 2.7mJ (on), 1.1mJ (off)
Input Type : Standard
Gate Charge : 370nC
Td (on/off) @ 25°C : 40ns/475ns
Test Condition : 600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr) : 65ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 80A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 40A
Power - Max : 882W
Switching Energy : 2.7mJ (on), 1.1mJ (off)
Input Type : Standard
Gate Charge : 370nC
Td (on/off) @ 25°C : 40ns/475ns
Test Condition : 600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr) : 65ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
100 in stock
FGY75N60SMD
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 150A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 75A
Power - Max : 750W
Switching Energy : 2.3mJ (on), 770µJ (off)
Input Type : Standard
Gate Charge : 248nC
Td (on/off) @ 25°C : 24ns/136ns
Test Condition : 400V, 75A, 3 Ohm, 15V
Reverse Recovery Time (trr) : 55ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : PowerTO-247-3
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 150A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 75A
Power - Max : 750W
Switching Energy : 2.3mJ (on), 770µJ (off)
Input Type : Standard
Gate Charge : 248nC
Td (on/off) @ 25°C : 24ns/136ns
Test Condition : 400V, 75A, 3 Ohm, 15V
Reverse Recovery Time (trr) : 55ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : PowerTO-247-3
0
913 in stock
FIO50-12BD
IXYS Corporation / Littelfuse
Manufacturer : IXYS
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 50A
Current - Collector Pulsed (Icm) : -
Vce(on) (Max) @ Vge, Ic : 2.6V @ 15V, 30A
Power - Max : 200W
Switching Energy : 4.6mJ (on), 2.2mJ (off)
Input Type : Standard
Gate Charge : 150nC
Td (on/off) @ 25°C : -
Test Condition : 600V, 30A, 39 Ohm, 15V
Reverse Recovery Time (trr) : 150ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : i4-Pac™5
Supplier Device Package : ISOPLUS i4-PAC™
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 50A
Current - Collector Pulsed (Icm) : -
Vce(on) (Max) @ Vge, Ic : 2.6V @ 15V, 30A
Power - Max : 200W
Switching Energy : 4.6mJ (on), 2.2mJ (off)
Input Type : Standard
Gate Charge : 150nC
Td (on/off) @ 25°C : -
Test Condition : 600V, 30A, 39 Ohm, 15V
Reverse Recovery Time (trr) : 150ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : i4-Pac™5
Supplier Device Package : ISOPLUS i4-PAC™
0
100 in stock
GPA020A135MN-FD
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1350V
Current - Collector (Ic) (Max) : 40A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 2.3V @ 15V, 20A
Power - Max : 223W
Switching Energy : 2.5mJ (on), 760µJ (off)
Input Type : Standard
Gate Charge : 180nC
Td (on/off) @ 25°C : 25ns/175ns
Test Condition : 600V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) : 425ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3
Supplier Device Package : TO-3P
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1350V
Current - Collector (Ic) (Max) : 40A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 2.3V @ 15V, 20A
Power - Max : 223W
Switching Energy : 2.5mJ (on), 760µJ (off)
Input Type : Standard
Gate Charge : 180nC
Td (on/off) @ 25°C : 25ns/175ns
Test Condition : 600V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) : 425ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3
Supplier Device Package : TO-3P
0
31 in stock
GPA040A120L-FD
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 80A
Current - Collector Pulsed (Icm) : 120A
Vce(on) (Max) @ Vge, Ic : 2.6V @ 15V, 40A
Power - Max : 480W
Switching Energy : 5.3mJ (on), 1.1mJ (off)
Input Type : Standard
Gate Charge : 480nC
Td (on/off) @ 25°C : 55ns/200ns
Test Condition : 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : 200ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 80A
Current - Collector Pulsed (Icm) : 120A
Vce(on) (Max) @ Vge, Ic : 2.6V @ 15V, 40A
Power - Max : 480W
Switching Energy : 5.3mJ (on), 1.1mJ (off)
Input Type : Standard
Gate Charge : 480nC
Td (on/off) @ 25°C : 55ns/200ns
Test Condition : 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : 200ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
0
2198 in stock
.jpg "Show details for GT10G131(TE12L,Q)")
GT10G131(TE12L,Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 400V
Current - Collector (Ic) (Max) : -
Current - Collector Pulsed (Icm) : 200A
Vce(on) (Max) @ Vge, Ic : 2.3V @ 4V, 200A
Power - Max : 1W
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 3.1µs/2µs
Test Condition : -
Reverse Recovery Time (trr) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 400V
Current - Collector (Ic) (Max) : -
Current - Collector Pulsed (Icm) : 200A
Vce(on) (Max) @ Vge, Ic : 2.3V @ 4V, 200A
Power - Max : 1W
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 3.1µs/2µs
Test Condition : -
Reverse Recovery Time (trr) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
0
100 in stock
.jpg "Show details for GT10J312(Q)")
GT10J312(Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 10A
Current - Collector Pulsed (Icm) : 20A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Power - Max : 60W
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 400ns/400ns
Test Condition : 300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr) : 200ns
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-220SM
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 10A
Current - Collector Pulsed (Icm) : 20A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Power - Max : 60W
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 400ns/400ns
Test Condition : 300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr) : 200ns
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-220SM
0
100 in stock
GT50J121(Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 50A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 2.45V @ 15V, 50A
Power - Max : 240W
Switching Energy : 1.3mJ (on), 1.34mJ (off)
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 90ns/300ns
Test Condition : 300V, 50A, 13 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3PL
Supplier Device Package : TO-3P(LH)
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 50A
Current - Collector Pulsed (Icm) : 100A
Vce(on) (Max) @ Vge, Ic : 2.45V @ 15V, 50A
Power - Max : 240W
Switching Energy : 1.3mJ (on), 1.34mJ (off)
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 90ns/300ns
Test Condition : 300V, 50A, 13 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3PL
Supplier Device Package : TO-3P(LH)
0
100 in stock
GT60N321(Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 1000V
Current - Collector (Ic) (Max) : 60A
Current - Collector Pulsed (Icm) : 120A
Vce(on) (Max) @ Vge, Ic : 2.8V @ 15V, 60A
Power - Max : 170W
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 330ns/700ns
Test Condition : -
Reverse Recovery Time (trr) : 2.5µs
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3PL
Supplier Device Package : TO-3P(LH)
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 1000V
Current - Collector (Ic) (Max) : 60A
Current - Collector Pulsed (Icm) : 120A
Vce(on) (Max) @ Vge, Ic : 2.8V @ 15V, 60A
Power - Max : 170W
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 330ns/700ns
Test Condition : -
Reverse Recovery Time (trr) : 2.5µs
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3PL
Supplier Device Package : TO-3P(LH)
0
100 in stock
.JPG "Show details for GT8G133(TE12L,Q)")
GT8G133(TE12L,Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 400V
Current - Collector (Ic) (Max) : -
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 2.9V @ 4V, 150A
Power - Max : 600mW
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 1.7µs/2µs
Test Condition : -
Reverse Recovery Time (trr) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package : 8-TSSOP
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 400V
Current - Collector (Ic) (Max) : -
Current - Collector Pulsed (Icm) : 150A
Vce(on) (Max) @ Vge, Ic : 2.9V @ 4V, 150A
Power - Max : 600mW
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 1.7µs/2µs
Test Condition : -
Reverse Recovery Time (trr) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package : 8-TSSOP
0
100 in stock
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